Invention Grant
US08017977B2 Field effect transistor having recessed gate in compositional graded layer
有权
场效应晶体管在组成梯度层中具有凹入栅极
- Patent Title: Field effect transistor having recessed gate in compositional graded layer
- Patent Title (中): 场效应晶体管在组成梯度层中具有凹入栅极
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Application No.: US11940157Application Date: 2007-11-14
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Publication No.: US08017977B2Publication Date: 2011-09-13
- Inventor: John Twynam
- Applicant: John Twynam
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-309095 20061115
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/47
Abstract:
A GaN heterojunction FET has an AlxGa1-xN first graded layer and an AlyGa1-yN second graded layer, which are formed sequentially on a channel layer. The Al mole fraction x of the first graded layer decreases linearly from, for example, 0.2 at an interface of the first graded layer with the channel layer to 0.1 at an interface thereof with the second graded layer. The Al mole fraction y of the second graded layer increases from, for example, 0.1 at an interface of the second graded layer with the first graded layer to 0.35 at a surface located on the opposite side from the first graded layer. Because the intrinsic polarization of AlGaN depends on the Al mole fraction, fixed negative charge is generated in the AlxGa1-xN first graded layer, and fixed positive charge is generated in the AlyGa1-yN second graded layer.
Public/Granted literature
- US20080308843A1 FIELD EFFECT TRANSISTOR HAVING A COMPOSITIONALLY GRADED LAYER Public/Granted day:2008-12-18
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