Invention Grant
US08017981B2 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
有权
宽带隙半导体中的常规集成JFET电源开关及其制造方法
- Patent Title: Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
- Patent Title (中): 宽带隙半导体中的常规集成JFET电源开关及其制造方法
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Application No.: US12826033Application Date: 2010-06-29
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Publication No.: US08017981B2Publication Date: 2011-09-13
- Inventor: Igor Sankin , Joseph Neil Merrett
- Applicant: Igor Sankin , Joseph Neil Merrett
- Applicant Address: US MS Starkville
- Assignee: SemiSouth Laboratories, Inc.
- Current Assignee: SemiSouth Laboratories, Inc.
- Current Assignee Address: US MS Starkville
- Agency: Morris, Manning & Martin, LLP
- Agent Christopher W. Raimund
- Main IPC: H01L27/085
- IPC: H01L27/085
Abstract:
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
Public/Granted literature
- US20100295102A1 NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING Public/Granted day:2010-11-25
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