Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and method for manufacturing same
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US12405522Application Date: 2009-03-17
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Publication No.: US08017993B2Publication Date: 2011-09-13
- Inventor: Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi
- Applicant: Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-171009 20080630
- Main IPC: H01L29/792
- IPC: H01L29/792

Abstract:
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and a charge storage layer located on both sides of each of the electrode films in the stacking direction and insulated from the electrode film and the semiconductor pillar.
Public/Granted literature
- US20090321813A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2009-12-31
Information query
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