Invention Grant
- Patent Title: Low cost multi-state magnetic memory
- Patent Title (中): 低成本多状态磁存储器
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Application No.: US11860467Application Date: 2007-09-24
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Publication No.: US08018011B2Publication Date: 2011-09-13
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLaw Group LLP
- Agent Maryam Imam
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/00
Abstract:
A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
Public/Granted literature
- US20080225585A1 Low Cost Multi-State Magnetic Memory Public/Granted day:2008-09-18
Information query
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