Invention Grant
US08018016B2 Back-illuminated image sensors having both frontside and backside photodetectors
有权
具有前侧和后侧光电检测器的背照式图像传感器
- Patent Title: Back-illuminated image sensors having both frontside and backside photodetectors
- Patent Title (中): 具有前侧和后侧光电检测器的背照式图像传感器
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Application No.: US12492460Application Date: 2009-06-26
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Publication No.: US08018016B2Publication Date: 2011-09-13
- Inventor: John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
- Applicant: John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/101
- IPC: H01L31/101

Abstract:
A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
Public/Granted literature
- US20100327392A1 BACK-ILLUMINATED IMAGE SENSORS HAVING BOTH FRONTSIDE AND BACKSIDE PHOTODETECTORS Public/Granted day:2010-12-30
Information query
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