Invention Grant
- Patent Title: High dielectric antenna substrate and antenna thereof
- Patent Title (中): 高介电天线基板及其天线
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Application No.: US12234427Application Date: 2008-09-19
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Publication No.: US08018397B2Publication Date: 2011-09-13
- Inventor: Uei-Ming Jow , Chang-Sheng Chen
- Applicant: Uei-Ming Jow , Chang-Sheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Workman Nydegger
- Priority: TW94147751A 20051230
- Main IPC: H01Q15/02
- IPC: H01Q15/02 ; H01Q1/38

Abstract:
A high dielectric antenna substrate includes a first dielectric layer having a first dielectric constant, and a second dielectric layer having a second dielectric constant. The second dielectric layer is formed on one surface of the first dielectric layer. The second dielectric constant is lower than the first dielectric constant. Furthermore, a first metal layer and a second metal layer are optionally formed on the same surface or two surfaces of the first dielectric layer to compose a capacitor.
Public/Granted literature
- US20090015488A1 HIGH DIELECTRIC ANTENNA SUBSTRATE AND ANTENNA THEREOF Public/Granted day:2009-01-15
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