Invention Grant
- Patent Title: Lithographic apparatus, radiation system and device manufacturing method
- Patent Title (中): 光刻设备，辐射系统和器件制造方法
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Application No.: US11170788Application Date: 2005-06-30
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Publication No.: US08018574B2Publication Date: 2011-09-13
- Inventor: Robert Rafilevitch Gayazov , Vadim Yevgenyevich Banine , Vladimir Vitalevitch Ivanov , Evgenii Dmitreevitch Korob , Konstantin Nikolaevitch Koshelev , Givi Georgievitch Zukavishvili , Yurii Victorovitch Sidelnikov
- Applicant: Robert Rafilevitch Gayazov , Vadim Yevgenyevich Banine , Vladimir Vitalevitch Ivanov , Evgenii Dmitreevitch Korob , Konstantin Nikolaevitch Koshelev , Givi Georgievitch Zukavishvili , Yurii Victorovitch Sidelnikov
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/42
- IPC: G03B27/42
Abstract:
A foil trap is located in a path of a radiation beam. The foil trap includes an array of conductive strips. A voltage application circuit is coupled to the strips to apply voltage differences between pairs of adjacent ones of the strips. The voltage application circuit includes a current limiting circuit arranged to limit currents to the strips to values below a threshold value above which self-sustained arc discharge may arise in the foil trap.
Public/Granted literature
- US20070001126A1 Lithographic apparatus, radiation system and device manufacturing method Public/Granted day:2007-01-04
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