Invention Grant
US08018691B2 CPP dual free layer magnetoresistive head for magnetic data storage
有权
CPP双自由层磁阻磁头用于磁数据存储
- Patent Title: CPP dual free layer magnetoresistive head for magnetic data storage
- Patent Title (中): CPP双自由层磁阻磁头用于磁数据存储
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Application No.: US12254662Application Date: 2008-10-20
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Publication No.: US08018691B2Publication Date: 2011-09-13
- Inventor: Hardayal Singh Gill , Chang-Man Park
- Applicant: Hardayal Singh Gill , Chang-Man Park
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.
Public/Granted literature
- US20100097729A1 CPP DUAL FREE LAYER MAGNETORESISTIVE HEAD FOR MAGNETIC DATA STORAGE Public/Granted day:2010-04-22
Information query
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