Invention Grant
US08018769B2 Non-volatile memory with linear estimation of initial programming voltage
有权
具有初始编程电压线性估计的非易失性存储器
- Patent Title: Non-volatile memory with linear estimation of initial programming voltage
- Patent Title (中): 具有初始编程电压线性估计的非易失性存储器
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Application No.: US12573405Application Date: 2009-10-05
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Publication No.: US08018769B2Publication Date: 2011-09-13
- Inventor: Loc Tu , Charles Moana Hook , Yan Li
- Applicant: Loc Tu , Charles Moana Hook , Yan Li
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies Inc.
- Current Assignee: Sandisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
In a non-volatile memory, a selected page on a word line is successively programmed by a series of voltage pulses of a staircase waveform with verifications in between the pulses until the page is verified to a designated pattern. The programming voltage at the time the page is programmed verified will be used to estimate the initial value of a starting programming voltage for the page. The estimation is further refined by using the estimate from a first pass in a second pass. Also, when the test is over multiple blocks, sampling of word lines based on similar geometrical locations of the blocks can yield a starting programming voltage optimized for faster programming pages.
Public/Granted literature
- US20100020614A1 Non-Volatile Memory With Linear Estimation of Initial Programming Voltage Public/Granted day:2010-01-28
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