Invention Grant
- Patent Title: Array of non-volatile memory cells including embedded local and global reference cells and system
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Application No.: US12398155Application Date: 2009-03-04
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Publication No.: US08018773B2Publication Date: 2011-09-13
- Inventor: Hieu Van Tran , Anh Ly , Hung Q. Nguyen , Thuan T. Vu
- Applicant: Hieu Van Tran , Anh Ly , Hung Q. Nguyen , Thuan T. Vu
- Applicant Address: US CA Sunnyvale
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: DLA Piper LLP (US)
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
An array of memory cells has a first side adjacent to a first column, a second side opposite the first side, a third side adjacent to a first row, and a fourth side opposite the third side. Each memory cell is connected to a bit line, a high voltage source, and a low voltage source. Reference cells, substantially the same as the memory cells, evenly spaced apart, are embedded in the array. A high voltage decoder is on the first side, connected to the memory cells and reference cells in the same row. A low voltage row decoder is on the second side, connected to the memory cells and reference cells in the same row. Sense amplifiers are on the third side, connected to the memory cells and to the reference cells.
Public/Granted literature
- US20100226181A1 Array Of Non-volatile Memory Cells Including Embedded Local And Global Reference Cells And System Public/Granted day:2010-09-09
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