Invention Grant
US08018782B2 Non-volatile memory devices and methods of erasing non-volatile memory devices
有权
非易失性存储器件和擦除非易失性存储器件的方法
- Patent Title: Non-volatile memory devices and methods of erasing non-volatile memory devices
- Patent Title (中): 非易失性存储器件和擦除非易失性存储器件的方法
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Application No.: US12486056Application Date: 2009-06-17
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Publication No.: US08018782B2Publication Date: 2011-09-13
- Inventor: Kitae Park , Doogon Kim , Moosung Kim , Hansoo Kim
- Applicant: Kitae Park , Doogon Kim , Moosung Kim , Hansoo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2008-0059081 20080623
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
In one embodiment, an erase method for a memory including a memory array having at least first and second programmable transistors connected in series, includes restricting flow of electrons from the first programmable transistor into the second programmable transistor during an erase operation.
Public/Granted literature
- US20090316491A1 NON-VOLATILE MEMORY DEVICES AND METHODS OF ERASING NON-VOLATILE MEMORY DEVICES Public/Granted day:2009-12-24
Information query
