Invention Grant
- Patent Title: Management of power domains in an integrated circuit
- Patent Title (中): 集成电路中电源域的管理
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Application No.: US12192683Application Date: 2008-08-15
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Publication No.: US08020017B2Publication Date: 2011-09-13
- Inventor: Milind P. Padhye , Noah W. Bamford , Anuj Singhania
- Applicant: Milind P. Padhye , Noah W. Bamford , Anuj Singhania
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent David G. Dolezal
- Main IPC: G06F1/26
- IPC: G06F1/26
Abstract:
A method of operating a circuit, including operating in a first mode, wherein in the first mode, a first power domain operates in an active power mode and a second power domain operates in an active power mode, wherein in the first mode, a first set of at least one terminal of a first circuit of the first power domain are coupled to a second set of at least one terminal of a second circuit of the second power mode via an isolation circuit for providing signals from the first circuit to the second circuit, is provided. The method further includes operating the circuit in a second mode, wherein in the second mode, the first power domain operates in a power gated mode and a second power domain operates in an active power mode.
Public/Granted literature
- US20100042858A1 MANAGEMENT OF POWER DOMAINS IN AN INTEGRATED CIRCUIT Public/Granted day:2010-02-18
Information query
