Invention Grant
- Patent Title: MEMS integrated circuit with polymerized siloxane layer
- Patent Title (中): 具有聚合硅氧烷层的MEMS集成电路
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Application No.: US12704496Application Date: 2010-02-11
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Publication No.: US08025365B2Publication Date: 2011-09-27
- Inventor: Gregory John McAvoy , Kia Silverbrook , Emma Rose Kerr , Misty Bagnat , Vincent Patrick Lawlor
- Applicant: Gregory John McAvoy , Kia Silverbrook , Emma Rose Kerr , Misty Bagnat , Vincent Patrick Lawlor
- Applicant Address: AU Balmain, New South Wales
- Assignee: Silverbrook Research Pty Ltd
- Current Assignee: Silverbrook Research Pty Ltd
- Current Assignee Address: AU Balmain, New South Wales
- Main IPC: B41J2/04
- IPC: B41J2/04
Abstract:
A MEMS integrated circuit comprises: a silicon substrate having a passivated CMOS layer, a MEMS layer disposed on the passivated CMOS layer, and a polymer layer disposed on the MEMS layer. The CMOS layer comprises drive circuitry for actuating actuator devices in the MEMS layer and the polymer layer comprises a polymerized siloxane.
Public/Granted literature
- US20100149266A1 Mems Integrated Circuit With Polymerized Siloxane Layer Public/Granted day:2010-06-17
Information query
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