Invention Grant
- Patent Title: Developing apparatus and developing method
- Patent Title (中): 开发设备和开发方法
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Application No.: US12877612Application Date: 2010-09-08
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Publication No.: US08026048B2Publication Date: 2011-09-27
- Inventor: Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
- Applicant: Atsushi Ookouchi , Taro Yamamoto , Hirofumi Takeguchi , Hideharu Kyouda , Kousuke Yoshihara
- Applicant Address: JP Tokyo-To
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo-To
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-435897 20031226; JP2004-233617 20040810
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/26 ; G03F7/30 ; B05C5/02

Abstract:
A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
Public/Granted literature
- US20100330508A1 DEVELOPING APPARATUS AND DEVELOPING METHOD Public/Granted day:2010-12-30
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