Invention Grant
- Patent Title: Method of manufacturing MEMS device
- Patent Title (中): 制造MEMS器件的方法
-
Application No.: US12684248Application Date: 2010-01-08
-
Publication No.: US08026120B2Publication Date: 2011-09-27
- Inventor: Ryuji Kihara , Shogo Inaba
- Applicant: Ryuji Kihara , Shogo Inaba
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2009-005408 20090114
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing an MEMS device includes: forming a covering structure having an MEMS structure and a hollow portion, which is located on a periphery of the MEMS structure and is opened to an outside, on a substrate; and performing surface etching for the MEMS structure in a gas phase by supplying an etching gas to the periphery of the MEMS structure from the outside.
Public/Granted literature
- US20100178717A1 METHOD OF MANUFACTURING MEMS DEVICE Public/Granted day:2010-07-15
Information query
IPC分类:
