Invention Grant
- Patent Title: Semiconductor element and manufacturing method thereof
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US11933935Application Date: 2007-11-01
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Publication No.: US08026143B2Publication Date: 2011-09-27
- Inventor: Naomu Kitano , Takashi Minami , Motomu Kosuda , Heiji Watanabe
- Applicant: Naomu Kitano , Takashi Minami , Motomu Kosuda , Heiji Watanabe
- Applicant Address: JP Kanagawa
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-178723 20070706
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film is formed by sputtering a Hf metal film on a SiO2 film (or a SiON film) on a Si wafer. A TiO2 film is formed by sputtering a Ti metal film on the HfSiO film and subjecting the Ti metal film to a thermal oxidation treatment. A TiN metal film is deposited on the TiO2 film. The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO2/HfSiO/SiO2/Si structure satisfies the conditions: EOT
Public/Granted literature
- US20080305597A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-12-11
Information query
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