Invention Grant
- Patent Title: Separation method of semiconductor device
- Patent Title (中): 半导体器件分离方法
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Application No.: US11798095Application Date: 2007-05-10
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Publication No.: US08026152B2Publication Date: 2011-09-27
- Inventor: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
- Applicant: Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-380726 20021227
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/36
Abstract:
It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
Public/Granted literature
- US20070275506A1 Semiconductor device and a method of manufacturing the same Public/Granted day:2007-11-29
Information query
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