Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming

Invention Grant

US08026168B2 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 有权

Title translation: 含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法

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Patent Title: Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
Patent Title (中): 含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法
Application No.: US11839410

Application Date: 2007-08-15
Publication No.: US08026168B2

Publication Date: 2011-09-27
Inventor: Tadahiro Ishizaka , Shigeru Mizuno
Applicant: Tadahiro Ishizaka , Shigeru Mizuno
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming

Abstract:

The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.

Abstract(Chinese):

该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

Public/Granted literature

US20090045514A1 SEMICONDUCTOR DEVICE CONTAINING AN ALUMINUM TANTALUM CARBONITRIDE BARRIER FILM AND METHOD OF FORMING Public/Granted day:2009-02-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）