Invention Grant
US08026172B2 Method of forming contact hole arrays using a hybrid spacer technique
有权
使用混合间隔技术形成接触孔阵列的方法
- Patent Title: Method of forming contact hole arrays using a hybrid spacer technique
- Patent Title (中): 使用混合间隔技术形成接触孔阵列的方法
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Application No.: US12458017Application Date: 2009-06-29
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Publication No.: US08026172B2Publication Date: 2011-09-27
- Inventor: Chun-Ming Wang , Chenche Huang , Masaaki Higashitani
- Applicant: Chun-Ming Wang , Chenche Huang , Masaaki Higashitani
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
One embodiment of the invention provides a method of forming a plurality of contact holes, including forming a first feature and a second feature over an underlying material, forming sidewall spacers on the first and second features, removing the first and second features without removing the sidewall spacers, forming a cover mask at least partially exposing the sidewall spacers, and etching the underlying material using the cover mask and the sidewall spacers as a mask to form the plurality of contact holes.
Public/Granted literature
- US20100330806A1 Method of forming contact hole arrays using a hybrid spacer technique Public/Granted day:2010-12-30
Information query
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