Invention Grant
- Patent Title: Image sensor and fabrication method thereof
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12634808Application Date: 2009-12-10
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Publication No.: US08026564B2Publication Date: 2011-09-27
- Inventor: Jin-Ho Park
- Applicant: Jin-Ho Park
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0138326 20081231
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
An image sensor and a method of fabricating an image sensor. A method of fabricating an image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate, a filter array including color filters arranged corresponding to upper parts of photodiodes, a plurality of hydrophilic lenses arranged over a filter array spaced apart from one another, and/or a plurality of hydrophobic lenses arranged over a filter array between hydrophilic lenses. A curvature of a lens may be substantially equal in a horizontal, vertical and/or diagonal direction.
Public/Granted literature
- US20100164034A1 IMAGE SENSOR AND FABRICATION METHOD THEREOF Public/Granted day:2010-07-01
Information query
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