Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12149115Application Date: 2008-04-28
-
Publication No.: US08026566B2Publication Date: 2011-09-27
- Inventor: Masafumi Horio , Yoshinari Ikeda , Eiji Mochizuki
- Applicant: Masafumi Horio , Yoshinari Ikeda , Eiji Mochizuki
- Applicant Address: JP Tokyo
- Assignee: Fuji Electric Systems Co., Ltd.
- Current Assignee: Fuji Electric Systems Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agent Manabu Kanesaka
- Priority: JP2007-132573 20070518
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L21/60
Abstract:
A semiconductor device includes a first metal foil, an insulating sheet mounted on an upper surface of the first metal foil main, at least one second metal foil mounted on the insulating sheet, at least one solder layer mounted on the at least one second metal foil, and at least one semiconductor element mounted on the at least one second metal foil through the at least one solder layer. The at least one semiconductor has a thickness of 50 μm or greater and less than 100 μm.
Public/Granted literature
- US20080284033A1 Semiconductor device and method for manufacturing semiconductor device Public/Granted day:2008-11-20
Information query
IPC分类:
