Invention Grant
US08026568B2 Second Schottky contact metal layer to improve GaN Schottky diode performance
失效
第二肖特基接触金属层，以提高GaN肖特基二极管的性能
- Patent Title: Second Schottky contact metal layer to improve GaN Schottky diode performance
- Patent Title (中): 第二肖特基接触金属层，以提高GaN肖特基二极管的性能
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Application No.: US11589124Application Date: 2006-10-27
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Publication No.: US08026568B2Publication Date: 2011-09-27
- Inventor: Ting Gang Zhu , Marek Pabisz
- Applicant: Ting Gang Zhu , Marek Pabisz
- Applicant Address: US NJ Somerset
- Assignee: Velox Semiconductor Corporation
- Current Assignee: Velox Semiconductor Corporation
- Current Assignee Address: US NJ Somerset
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L31/07
- IPC: H01L31/07 ; H01L21/338
Abstract:
A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
Public/Granted literature
- US20070108547A1 Second Schottky contact metal layer to improve GaN Schottky diode performance Public/Granted day:2007-05-17
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