Invention Grant
US08026718B2 Magnetic sensor, hall element, hall IC, magnetoresistive effect element, method of fabricating hall element, and method of fabricating magnetoresistive effect element
失效
磁传感器，霍尔元件，霍尔IC，磁阻效应元件，霍尔元件制造方法以及制造磁阻效应元件的方法
- Patent Title: Magnetic sensor, hall element, hall IC, magnetoresistive effect element, method of fabricating hall element, and method of fabricating magnetoresistive effect element
- Patent Title (中): 磁传感器，霍尔元件，霍尔IC，磁阻效应元件，霍尔元件制造方法以及制造磁阻效应元件的方法
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Application No.: US12193851Application Date: 2008-08-19
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Publication No.: US08026718B2Publication Date: 2011-09-27
- Inventor: Makoto Miyoshi , Mitsuhiro Tanaka
- Applicant: Makoto Miyoshi , Mitsuhiro Tanaka
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2007-220815 20070828; JP2008-167455 20080626
- Main IPC: G01R33/07
- IPC: G01R33/07
Abstract:
An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0
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