Invention Grant
- Patent Title: Asymmetric multilevel outphasing architecture for RF amplifiers
- Patent Title (中): 射频放大器的非对称多电平外相结构
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Application No.: US12615696Application Date: 2009-11-10
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Publication No.: US08026763B2Publication Date: 2011-09-27
- Inventor: Joel L. Dawson , David J. Perreault , SungWon Chung , Philip Godoy , Everest Huang
- Applicant: Joel L. Dawson , David J. Perreault , SungWon Chung , Philip Godoy , Everest Huang
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H03F3/68
- IPC: H03F3/68

Abstract:
A radio frequency (RF) circuit includes a power supply configured to generate a plurality of voltages, a plurality of power amplifiers, each having an RF output port and a power supply input port, a switch network having a plurality of input ports coupled to the power supply and a plurality of switch network output ports coupled to the power supply input ports of the plurality of power amplifiers, wherein the switch network is configured to output selected ones of the plurality of voltages from the plurality of switch network output ports, at least two of the switch network output port voltages capable of being different ones of the plurality of voltages, and an RF power combiner circuit having a plurality of input ports coupled to RF output ports of the plurality of power amplifiers and an output port at which is provided an output signal of the RF circuit.
Public/Granted literature
- US20100117727A1 ASYMMETRIC MULTILEVEL OUTPHASING ARCHITECTURE FOR RF AMPLIFIERS Public/Granted day:2010-05-13
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