Invention Grant
US08027132B2 Failure detection device for power circuit including switching element
有权
包括开关元件的电源电路故障检测装置
- Patent Title: Failure detection device for power circuit including switching element
- Patent Title (中): 包括开关元件的电源电路故障检测装置
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Application No.: US12127506Application Date: 2008-05-27
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Publication No.: US08027132B2Publication Date: 2011-09-27
- Inventor: Takeshi Omaru
- Applicant: Takeshi Omaru
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-332372 20071225
- Main IPC: H02H3/08
- IPC: H02H3/08

Abstract:
A failure detection device detects the voltage across the main electrodes of an IGBT via a diode. The failure detection device determines occurrence of short-circuit failure in the IGBT when the anode voltage of the diode is lower than a first predetermined reference voltage. Determination can be made, excluding the case of a proper operation corresponding to a flywheel diode in an ON state, preferably together with the condition that the anode voltage of the diode is higher than a second predetermined reference voltage.
Public/Granted literature
- US20090160476A1 FAILURE DETECTION DEVICE FOR POWER CIRCUIT INCLUDING SWITCHING ELEMENT Public/Granted day:2009-06-25
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