A semiconductor storage device includes: reading blocks; third wirings; reading switches; a control circuit; and evaluating circuits. The reading blocks includes first and second wirings extended in a first and second direction, respectively, and resistive storage elements arranged at points where the first and second wirings intersect. The third wirings is extended in the second direction and provided correspondingly to the second wirings. The reading switches are arranged between the third and second wirings. The control circuit controls the reading switches and supplies currents or the like to the first wirings. The evaluating circuits are connected to the third wirings and evaluate the currents or the like. When data is read out, the control circuit selects a selection reading block and a selection first wiring and supplies the currents or the like, and the evaluating circuits execute the evaluations of the currents or the like in the third wirings.