A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.