Invention Grant
- Patent Title: Method for fabricating a surface acoustic wave device
- Patent Title (中): 声表面波装置的制造方法
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Application No.: US11944207Application Date: 2007-11-21
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Publication No.: US08028389B2Publication Date: 2011-10-04
- Inventor: Jyh-Shin Chen , Sheng-Wen Chen , Hui-Ling Kao , Yu-Sheng Kung , Yu-Hsin Lin , Yi-Chiuen Hu
- Applicant: Jyh-Shin Chen , Sheng-Wen Chen , Hui-Ling Kao , Yu-Sheng Kung , Yu-Hsin Lin , Yi-Chiuen Hu
- Applicant Address: TW Hsin-Chu
- Assignee: Precision Instrument Development Center
- Current Assignee: Precision Instrument Development Center
- Current Assignee Address: TW Hsin-Chu
- Agency: Volpe and Koenig, P.C.
- Main IPC: H04R17/10
- IPC: H04R17/10 ; B44C1/22

Abstract:
A novel surface acoustic wave device with a decreased velocity dispersion and a low insertion loss as well as the fabrication method therefore is provided. The surface acoustic wave device includes a substrate, an insulating layer with an indentation on the substrate, a silicon layer divided by an etched window with a first portion on the insulating layer and a second portion suspended above the indentation, a piezoelectric layer on the first and the second portions of the silicon layer, and at least an electrode on the piezoelectric layer.
Public/Granted literature
- US20080066279A1 SURFACE ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2008-03-20
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