Invention Grant
- Patent Title: Write element modification control using a galvanic couple
- Patent Title (中): 使用电偶进行写元件修改控制
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Application No.: US11880024Application Date: 2007-07-19
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Publication No.: US08029659B2Publication Date: 2011-10-04
- Inventor: Peter K. McGeehin , GE Yi , Andrew B. McInroy , Brendan Lafferty
- Applicant: Peter K. McGeehin , GE Yi , Andrew B. McInroy , Brendan Lafferty
- Applicant Address: US CA Cupertino
- Assignee: Seagate Techology LLC
- Current Assignee: Seagate Techology LLC
- Current Assignee Address: US CA Cupertino
- Agent David Fairbain
- Main IPC: C25D11/00
- IPC: C25D11/00

Abstract:
A modification rate at a surface of an anode formed on a substrate is controlled. The anode is connected to a cathode comprised of a material having a higher nobility than the anode. An electrically conductive path is established between the anode and the cathode through an electrolyte to induce formation of an oxide layer at the anode surface that is more resistive to modification than the anode.
Public/Granted literature
- US20090020432A1 Write element modification control using a galvanic couple Public/Granted day:2009-01-22
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