Invention Grant
US08029660B2 Manufacturing method of semiconductor integrated device with inverting plating cup
有权
具有反转电镀杯的半导体集成器件的制造方法
- Patent Title: Manufacturing method of semiconductor integrated device with inverting plating cup
- Patent Title (中): 具有反转电镀杯的半导体集成器件的制造方法
-
Application No.: US12256565Application Date: 2008-10-23
-
Publication No.: US08029660B2Publication Date: 2011-10-04
- Inventor: Tota Maitani , Taku Kanaoka
- Applicant: Tota Maitani , Taku Kanaoka
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-285969 20071102
- Main IPC: C25D21/10
- IPC: C25D21/10 ; C25D7/12

Abstract:
Manufacture of semiconductor products such as LCD driver requires a bump plating step for forming a gold bump electrode having a size of from about 15 to 20 μm. This bump plating step is performed by electroplating with a predetermined plating solution, but projections intermittently appear on the bump electrode during a mass production process. In the invention, abnormal growth of projections over the gold bump electrode is prevented by adding, prior to the gold bump plating step, a step of circulating and stirring a plating solution while erecting a plating cup and efficiently dissolving/discharging a precipitate. This step is performed for each wafer to be treated.
Public/Granted literature
- US20090117730A1 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED DEVICE Public/Granted day:2009-05-07
Information query