Invention Grant
- Patent Title: Plasma immersion ion processing for coating of hollow substrates
- Patent Title (中): 用于涂覆中空基板的等离子浸渍离子处理
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Application No.: US11752787Application Date: 2007-05-23
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Publication No.: US08029875B2Publication Date: 2011-10-04
- Inventor: Ronghua Wei , Christopher Rincon , James H. Arps
- Applicant: Ronghua Wei , Christopher Rincon , James H. Arps
- Applicant Address: US TX San Antonio
- Assignee: Southwest Research Institute
- Current Assignee: Southwest Research Institute
- Current Assignee Address: US TX San Antonio
- Agency: Grossman, Tucker et al.
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
The present disclosure relates to a method for plasma ion deposition and coating formation. A vacuum chamber may be supplied, wherein the vacuum chamber is formed by a hollow substrate having a length, diameter and interior surface. A plasma may be formed within the chamber while applying a negative bias to the hollow substrate to draw ions from the plasma to the interior surface of the hollow substrate to deposit ions onto the interior surface and forming a coating. The coating may have a Vickers Hardness Number (Hv) of at least 500.
Public/Granted literature
- US20080292806A1 Plasma Immersion Ion Processing For Coating Of Hollow Substrates Public/Granted day:2008-11-27
Information query
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