Invention Grant
- Patent Title: Porous silicon carbide and process for producing the same
- Patent Title (中): 多孔碳化硅及其制造方法
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Application No.: US12206600Application Date: 2008-09-08
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Publication No.: US08029882B2Publication Date: 2011-10-04
- Inventor: Yoshio Kikuchi , Shinji Kawasaki
- Applicant: Yoshio Kikuchi , Shinji Kawasaki
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-076000 20060320
- Main IPC: B32B3/12
- IPC: B32B3/12 ; B22F3/11 ; B01J27/224 ; B01J21/00

Abstract:
A silicon carbide porous object includes silicon carbide as an aggregate and metal silicon as a binder, the particles of silicon carbide being bonded to one another so as to have pores thereamong. A method for producing a silicon carbide porous object includes: firing raw materials formed by mixing silicon carbide and metal silicon with metal aluminum or an alloy including metal silicon and metal aluminum in an inert gas atmosphere or a reduced-pressure atmosphere to produce a metal aluminum-metal silicon-silicon carbide porous object; and oxidizing and firing the metal aluminum-metal silicon-silicon carbide porous object in an oxygen atmosphere.
Public/Granted literature
- US20090011179A1 POROUS SILICON CARBIDE AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-01-08
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