Invention Grant
US08029905B2 GeSiSn-based compounds, templates, and semiconductor structures
有权
基于GeSiSn的化合物，模板和半导体结构
- Patent Title: GeSiSn-based compounds, templates, and semiconductor structures
- Patent Title (中): 基于GeSiSn的化合物，模板和半导体结构
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Application No.: US11908143Application Date: 2006-03-10
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Publication No.: US08029905B2Publication Date: 2011-10-04
- Inventor: John Kouvetakis , Radek Roucka
- Applicant: John Kouvetakis , Radek Roucka
- Applicant Address: US AZ Scottsdale
- Assignee: Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University
- Current Assignee: Arizona Board of Regents, a Body Corporate of the State of Arizona acting for and on behalf of Arizona State University
- Current Assignee Address: US AZ Scottsdale
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- International Application: PCT/US2006/008654 WO 20060310
- International Announcement: WO2006/099171 WO 20060921
- Main IPC: B32B15/04
- IPC: B32B15/04 ; C01B33/00
Abstract:
The present invention provides novel compounds of the formula Gei-x-ySixSny, wherein 0.01
Public/Granted literature
- US20080187768A1 Novel Gesisn-Based Compounds, Templates, and Semiconductor Structures Public/Granted day:2008-08-07
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