A semiconductor device including a ferrite layer, a widebandgap semiconductor material layer, and a buffer layer. The buffer layer comprises an interweaving of MgO and BaM. In addition the buffer layer allows a gradual reduction of the interfacial stress, and mediates the strain between a silicon substrate and a ferrite layer of the device. In addition, the buffer layer allows for high crystal alignment resulting in high crystal quality and thereby producing a low microwave loss semiconductor device. The buffer layer also minimizes chemical interdiffusion of atoms between the substrate and the ferrite layer.