Invention Grant
- Patent Title: Material and method for photolithography
- Patent Title (中): 光刻材料和方法
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Application No.: US11748322Application Date: 2007-05-14
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Publication No.: US08029969B2Publication Date: 2011-10-04
- Inventor: Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- Applicant: Hsiao-Wei Yeh , Jen-Chieh Shih , Jian-Hong Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/038 ; G03F7/11 ; G03C1/73

Abstract:
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
Public/Granted literature
- US20080286682A1 MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY Public/Granted day:2008-11-20
Information query
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