Invention Grant
US08030125B2 Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method 有权
有机薄膜晶体管基板,其制造方法,图像显示面板及其制造方法

  • Patent Title: Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
  • Patent Title (中): 有机薄膜晶体管基板,其制造方法,图像显示面板及其制造方法
  • Application No.: US12532976
    Application Date: 2008-03-25
  • Publication No.: US08030125B2
    Publication Date: 2011-10-04
  • Inventor: Kenji Kasahara
  • Applicant: Kenji Kasahara
  • Applicant Address: JP Tokyo
  • Assignee: Sumitomo Chemical Company, Limited
  • Current Assignee: Sumitomo Chemical Company, Limited
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JPP2007-082278 20070327
  • International Application: PCT/JP2008/055570 WO 20080325
  • International Announcement: WO2008/123244 WO 20081016
  • Main IPC: H01L51/50
  • IPC: H01L51/50
Organic thin-film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
Abstract:
The present invention is a method for manufacturing an organic thin-film transistor substrate including an organic thin-film transistor as a transistor element, and an object of the invention is to provide a manufacturing method capable of forming a bank in a smaller number of steps. The method for manufacturing the organic thin-film transistor substrate of the present invention, in which an organic thin-film transistor is formed in a first region on a substrate, a second region for forming a light-emitting element in abutment with the first region is included, and a bank part is formed in a peripheral part of the second region, is characterized by including: a first step of forming the organic thin-film transistor in the first region on the substrate and forming at least one of the gate insulation layer and the organic semiconductor layer included by this organic thin-film transistor as far as the second region, thereby forming, in the second region, a bank precursor layer composed of a laminated structure formed on the second region; and a second step of removing the regions of the bank precursor layer other than the peripheral part, thereby forming the bank part made of the remaining bank precursor layer.
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