Invention Grant
- Patent Title: Methods of forming NAND flash memory with fixed charge
- Patent Title (中): 用固定电荷形成NAND闪存的方法
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Application No.: US12729874Application Date: 2010-03-23
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Publication No.: US08030160B2Publication Date: 2011-10-04
- Inventor: Takashi Orimoto , George Matamis , Henry Chien , James Kai
- Applicant: Takashi Orimoto , George Matamis , Henry Chien , James Kai
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: H01L21/8247
- IPC: H01L21/8247
Abstract:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.
Public/Granted literature
- US20100178742A1 METHODS OF FORMING NAND FLASH MEMORY WITH FIXED CHARGE Public/Granted day:2010-07-15
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