Invention Grant
- Patent Title: Silicon nitride hardstop encapsulation layer for STI region
- Patent Title (中): 用于STI区域的氮化硅硬阻塞封装层
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Application No.: US12475056Application Date: 2009-05-29
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Publication No.: US08030173B2Publication Date: 2011-10-04
- Inventor: Michael D. Turner , Christopher J. Rando
- Applicant: Michael D. Turner , Christopher J. Rando
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Hamilton & Terrile, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/336
Abstract:
A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer (96) to cover a shallow trench isolation region (95), depositing a protective dielectric layer (97, 98) over the silicon nitride layer (96), and polishing and densifying the protective dielectric layer (97, 98) to thereby form a densified silicon nitride encapsulation layer (99) over the shallow trench isolation region (95).
Public/Granted literature
- US20100304548A1 Silicon Nitride Hardstop Encapsulation Layer for STI Region Public/Granted day:2010-12-02
Information query
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