Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12556408Application Date: 2009-09-09
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Publication No.: US08030179B2Publication Date: 2011-10-04
- Inventor: Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
- Applicant: Masataka Hoshino , Junichi Kasai , Kouichi Meguro , Ryota Fukuyama , Yasuhiro Shinma , Koji Taya , Masanori Onodera , Naomi Masuda
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion, LLC
- Current Assignee: Spansion, LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/4763
Abstract:
The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.
Public/Granted literature
- US20090325346A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-12-31
Information query
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