Invention Grant
- Patent Title: Method of fabricating nano-hetero structure
- Patent Title (中): 制造纳米异质结构的方法
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Application No.: US12432757Application Date: 2009-04-30
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Publication No.: US08030185B2Publication Date: 2011-10-04
- Inventor: Chun-Yi Chen , Yung-Jung Hsu
- Applicant: Chun-Yi Chen , Yung-Jung Hsu
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW97151899A 20081231
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A nano-hetero structure is provided. The nano-hetero structure includes at least one nano-semiconductor base and a plurality of metal nanoparticles attached on the surface of nano-semiconductor base.
Public/Granted literature
- US20100163841A1 NANO-HETERO STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-07-01
Information query
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