Invention Grant
- Patent Title: Simplified pitch doubling process flow
- Patent Title (中): 简化俯仰加倍流程
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Application No.: US12771951Application Date: 2010-04-30
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Publication No.: US08030217B2Publication Date: 2011-10-04
- Inventor: Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- Applicant: Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
Public/Granted literature
- US20100216307A1 SIMPLIFIED PITCH DOUBLING PROCESS FLOW Public/Granted day:2010-08-26
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