Invention Grant
US08030220B2 Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer
有权
用于增强含金属层成核的半导体表面的等离子体处理
- Patent Title: Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer
- Patent Title (中): 用于增强含金属层成核的半导体表面的等离子体处理
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Application No.: US12579072Application Date: 2009-10-14
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Publication No.: US08030220B2Publication Date: 2011-10-04
- Inventor: Dina H. Triyoso , Olubunmi O. Adetutu
- Applicant: Dina H. Triyoso , Olubunmi O. Adetutu
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the semiconductor surface, wherein the exposed surface is hydrophobic. The method may further include treating the exposed surface of the semiconductor substrate with plasma to neutralize a hydrophobicity associated with the exposed surface, wherein the exposed surface is treated using plasma with a power in a range of 100 watts to 500 watts and for duration in a range of 1 to 60 seconds. The method may further include forming a metal-containing layer on a top surface of the plasma treated surface using an atomic layer deposition process.
Public/Granted literature
- US20100035434A1 PLASMA TREATMENT OF A SEMICONDUCTOR SURFACE FOR ENHANCED NUCLEATION OF A METAL-CONTAINING LAYER Public/Granted day:2010-02-11
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