Invention Grant
- Patent Title: Synthesizing precursor solution enabling fabricating biaxially textured buffer layers by low temperature annealing
- Patent Title (中): 合成前体溶液,可通过低温退火制备双轴织构缓冲层
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Application No.: US12312880Application Date: 2007-01-12
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Publication No.: US08030247B2Publication Date: 2011-10-04
- Inventor: Jai-Moo Yoo , Young-Kuk Kim , Jae-Woong Ko , Kook-Chae Chung
- Applicant: Jai-Moo Yoo , Young-Kuk Kim , Jae-Woong Ko , Kook-Chae Chung
- Applicant Address: KR Daejeon
- Assignee: Korea Institute of Machinery & Materials
- Current Assignee: Korea Institute of Machinery & Materials
- Current Assignee Address: KR Daejeon
- Agency: Cooper & Dunham LLP
- Priority: KR10-2006-0132499 20061222
- International Application: PCT/KR2007/000231 WO 20070112
- International Announcement: WO2008/078852 WO 20080703
- Main IPC: H01L39/24
- IPC: H01L39/24 ; H01B1/20 ; B05D5/12

Abstract:
Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.
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