Invention Grant
US08030599B2 Substrate processing apparatus, heating device, and semiconductor device manufacturing method
有权
基板加工装置,加热装置以及半导体装置的制造方法
- Patent Title: Substrate processing apparatus, heating device, and semiconductor device manufacturing method
- Patent Title (中): 基板加工装置,加热装置以及半导体装置的制造方法
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Application No.: US12429462Application Date: 2009-04-24
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Publication No.: US08030599B2Publication Date: 2011-10-04
- Inventor: Masakazu Shimada
- Applicant: Masakazu Shimada
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Brundidge & Stanger, P.C.
- Priority: JP2008-204968 20080808
- Main IPC: F27B5/00
- IPC: F27B5/00 ; F27B5/08 ; F27B5/14 ; C23C16/00

Abstract:
Provided are a substrate processing apparatus, a heating device, and a semiconductor device manufacturing method. The substrate processing apparatus comprises a process chamber configured to process a substrate. A heating element is installed at a peripheral side of the process chamber. An annular inner wall is installed at a peripheral side of the heating element. An annular outer wall is installed at a peripheral side of the inner wall with a space being formed therebetween. An annular cooling member is installed at the space for cooling. An actuating mechanism moves the cooling member between a contacting position where the cooling member makes contact with at least one of the inner wall and the outer wall and a non-contacting position where the cooling member does not make contact with any one of the inner wall and the outer wall. A control unit controls at least the actuating mechanism.
Public/Granted literature
- US20100032425A1 SUBSTRATE PROCESSING APPARATUS, HEATING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-02-11
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