Invention Grant
- Patent Title: Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
- Patent Title (中): 背面照明成像装置,半导体基板,成像装置及制造背面照明成像装置的方法
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Application No.: US12821704Application Date: 2010-06-23
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Publication No.: US08030608B2Publication Date: 2011-10-04
- Inventor: Shinji Uya , Masanori Nagase , Yosuke Nakahashi , Toru Hachiya
- Applicant: Shinji Uya , Masanori Nagase , Yosuke Nakahashi , Toru Hachiya
- Applicant Address: JP Tokyo
- Assignee: FujiFilm Corporation
- Current Assignee: FujiFilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP2006-254041 20060920; JPP2006-281544 20061016; JPP2006-285194 20061019; JPP2007-108264 20070417; JPP2007-117051 20070426; JPP2007-123376 20070508
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18

Abstract:
A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.
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