Invention Grant
- Patent Title: Micro electro mechanical device and manufacturing method thereof
- Patent Title (中): 微机电装置及其制造方法
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Application No.: US12647704Application Date: 2009-12-28
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Publication No.: US08030651B2Publication Date: 2011-10-04
- Inventor: Mayumi Yamaguchi , Konami Izumi
- Applicant: Mayumi Yamaguchi , Konami Izumi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2006-196403 20060719
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
Public/Granted literature
- US20100133537A1 MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-06-03
Information query
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