Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12045304Application Date: 2008-03-10
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Publication No.: US08030691B2Publication Date: 2011-10-04
- Inventor: Hisao Kawasaki
- Applicant: Hisao Kawasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-070052 20070319
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L31/112 ; H01L21/338
Abstract:
An MMIC 100 is a semiconductor device which includes an FET formed on a GaAs substrate 10 and an MIM capacitor having a dielectric layer 20b arranged between a lower electrode 18b and an upper electrode 22b. A method for manufacturing the MMIC 100 is provided, in which a source electrode 16a and a drain electrode 16b of the FET are formed and then a gate electrode 18a of the FET and a lower electrode 18b of the MIM capacitor are formed simultaneously by the lift-off method.
Public/Granted literature
- US20080230813A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2008-09-25
Information query
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