Invention Grant
- Patent Title: Thin film transistor substrate, defect repairing method therefor, and display device
- Patent Title (中): 薄膜晶体管基板，缺陷修复方法及显示装置
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Application No.: US12320308Application Date: 2009-01-23
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Publication No.: US08030696B2Publication Date: 2011-10-04
- Inventor: Yasuyuki Ishihama
- Applicant: Yasuyuki Ishihama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2008-028089 20080207
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A thin film transistor substrate includes: a substrate; a thin film transistor and a capacitor formed on the substrate; and a protective film for protecting an electrode on a back surface side of the capacitor when an electrode on a front surface side of the capacitor is cut by irradiation with laser light, the protective film being disposed at such a position as to enclose a corner part of the electrode on the front surface side between the electrode on the front surface side and the electrode on the back surface side of the capacitor.
Public/Granted literature
- US20090200555A1 Thin film transistor substrate, defect repairing method therefor, and display device Public/Granted day:2009-08-13
Information query
IPC分类:
