Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12401698Application Date: 2009-03-11
-
Publication No.: US08030713B2Publication Date: 2011-10-04
- Inventor: Takayuki Hiraoka , Toshikazu Fukuda
- Applicant: Takayuki Hiraoka , Toshikazu Fukuda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2008-137103 20080526
- Main IPC: H01L27/088
- IPC: H01L27/088

Abstract:
A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.
Public/Granted literature
- US20090289310A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2009-11-26
Information query
IPC分类: