Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11971925Application Date: 2008-01-10
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Publication No.: US08030737B2Publication Date: 2011-10-04
- Inventor: Daisuke Oshida , Toshiyuki Takewaki , Takuji Onuma , Koichi Ohto
- Applicant: Daisuke Oshida , Toshiyuki Takewaki , Takuji Onuma , Koichi Ohto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-057469 20070307
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/92
Abstract:
A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.
Public/Granted literature
- US20080217737A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-09-11
Information query
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